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Package Marking and Ordering Information
Part Number
FCA47N60F
Top Mark
FCA47N60F
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics
T C = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Δ BV DSS
/ Δ T J
BV DS
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain to Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = 250 μ A, T J = 25 ° C
V GS = 0 V, I D = 250 μ A, T J = 150 ° C
I D = 250 μ A, Referenced to 25 ° C
V GS = 0 V, I D = 47 A
V DS = 600 V, V GS = 0 V,
V DS = 480 V, T C = 125 ° C
V GS = 30 V, V DS = 0 V
V GS = -30 V, V DS = 0 V
600
--
--
--
--
--
--
--
--
650
0.6
700
--
--
--
--
--
--
--
--
10
100
100
-100
V
V
V/ ° C
V
μ A
μ A
nA
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V DS = V GS , I D = 250 μ A
V GS = 10 V, I D = 23.5 A
V DS = 40 V, I D = 23.5 A
3.0
--
--
--
0.062
40
5.0
0.073
--
V
Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss
C oss(eff.)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
V DS = 25 V, V GS = 0 V,
f = 1 MHz
V DS = 480 V, V GS = 0 V, f = 1 MHz
V DS = 0 V to 400 V, V GS = 0 V
--
--
--
--
--
5900
3200
250
160
420
8000
4200
--
--
--
pF
pF
pF
pF
pF
Switching Characteristics
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 300 V, I D = 47 A,
V GS = 10 V, R G = 25 Ω
V DS = 480 V, I D = 47 A,
V GS = 10 V
(Note 4)
(Note 4)
--
--
--
--
--
--
--
185
210
520
75
210
38
110
430
450
1100
160
270
--
--
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
I SM
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
--
--
--
--
47
141
A
A
V SD
t rr
Q rr
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I S = 47 A
V GS = 0 V, I S = 47 A,
dI F /dt = 100 A/ μ s
--
--
--
--
240
2.04
1.4
--
--
V
ns
μ C
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. I AS = 18 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 47 A, di/dt ≤ 1200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2007 Fairchild Semiconductor Corporation
FCA47N60F Rev. C1
2
www.fairchildsemi.com
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